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Shanghai GaNova Electronic Information Co., Ltd.

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Home / Products / SiC Epitaxial Wafer / 6inch 4H SiC N Type Substrate 47.5mm No Secondary Flat /

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Shanghai GaNova Electronic Information Co., Ltd.
City:shanghai
Province/State:shanghai
Country/Region:china
Contact Person:Xiwen Bai (Ciel)
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6inch 4H SiC N Type Substrate 47.5mm No Secondary Flat
6inch 4H SiC N Type Substrate 47.5mm No Secondary Flat
  • 6inch 4H SiC N Type Substrate 47.5mm No Secondary Flat
Products Detailed
6inch 4H-SiC Substrate N-Type P-SBD Grade 350.0±25.0μc MPD≤0.5/cm2 Resistivity 0.015Ω•cm—0.025Ω•cm For Power And Microw 6inch 4H-SiC substrate N-Type ...
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Product Tags:
fr 4 substrate fr4 substrate t-slot aluminum profile

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