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5x10mm2 SP-Face 10-11 Un-Doped N-Type Free-Standing GaN Single Crystal Substrate with TTV ≤ 10µm Resistivity 0.05 Ω·cm

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Shanghai GaNova Electronic Information Co., Ltd.
City:shanghai
Province/State:shanghai
Country/Region:china
Contact Person:Xiwen Bai (Ciel)
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5x10mm2 SP-Face 10-11 Un-Doped N-Type Free-Standing GaN Single Crystal Substrate with TTV ≤ 10µm Resistivity 0.05 Ω·cm

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Brand Name :GaNova
Model Number :JDCD01-001-011
Certification :UKAS/ISO9001:2015
Place of Origin :Suzhou China
Payment Terms :T/T
Supply Ability :10000pcs/month
Delivery Time :3-4 week days
Packaging Details :Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers.
Dimensions :5 x 10mm²
Thickness :350 ±25µm
TTV :≤ 10µm
BoW :- 10µm ≤ BOW ≤ 10µm
Macro Defect Density :0cm⁻²
Useable Area :> 90% (edge exclusion)
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5*10mm2 SP-face (10-11) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer


Overview
GaN has many serious advantages over silicon, being more power efficient, faster, and even better recovery characteristics. However, while GaN may seem like a superior choice it won't be replacing silicon in all applications for a while.

Semi-insulating (SI) GaN is known to be transparent from 0.36 µm to~7 µm where an absorption on a second harmonic of optical phonons occurs.


(10-11) face Free-standing GaN Substrates
Item

GaN-FS-SP-U-S

GaN-FS-SP-N-S

GaN-FS-SP-SI-S

5x10mm2 SP-Face 10-11 Un-Doped N-Type Free-Standing GaN Single Crystal Substrate with TTV ≤ 10µm Resistivity 0.05 Ω·cm

Remarks:

A circular arc angle (R < 2 mm) is used for distinguishing the front and back surface.

Dimensions 5 x 10 mm2
Thickness 350 ±25 µm
Orientation

(10- 11) plane off angle toward A-axis 0 ±0.5°

(10- 11) plane off angle toward C-axis - 1 ±0.2°

Conduction Type N-type N-type Semi-Insulating
Resistivity (300K) < 0.1 Ω·cm < 0.05 Ω·cm > 106 Ω·cm
TTV ≤ 10 µm
BOW - 10 µm ≤ BOW ≤ 10 µm
Front Surface Roughness

< 0.2 nm (polished);

or < 0.3 nm (polished and surface treatment for epitaxy)

Back Surface Roughness

0.5 ~1.5 μm

option: 1~3 nm (fine ground); < 0.2 nm (polished)

Dislocation Density From 1 x 105 to 3 x 106 cm-2
Macro Defect Density 0 cm-2
Useable Area > 90% (edge exclusion)
Package Packaged in a class 100 clean room environment, in 6 PCS container, under a nitrogen atmosphere

Appendix: The diagram of miscut angle

5x10mm2 SP-Face 10-11 Un-Doped N-Type Free-Standing GaN Single Crystal Substrate with TTV ≤ 10µm Resistivity 0.05 Ω·cm

If δ1= 0 ±0.5°, then (10- 11) plane off angle toward A-Axis is 0 ±0.5°.

If δ2= - 1 ±0.2°, then (10- 11) plane off angle toward C-Axis is - 1 ±0.2°.

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

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