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10*10.5mm2 C-Face Fe-Doped SI-Type Free-Standing GaN Single Crystal Substrate Macro Defect Density 0cm⁻² TTV ≤ 10 Μm Resistivity 10⁶ Ω·Cm RF Devices Wafer

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Shanghai GaNova Electronic Information Co., Ltd.
City:shanghai
Province/State:shanghai
Country/Region:china
Contact Person:Xiwen Bai (Ciel)
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10*10.5mm2 C-Face Fe-Doped SI-Type Free-Standing GaN Single Crystal Substrate Macro Defect Density 0cm⁻² TTV ≤ 10 Μm Resistivity 10⁶ Ω·Cm RF Devices Wafer

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Brand Name :GaNova
Model Number :JDCD01-001-003
Certification :UKAS/ISO9001:2015
Place of Origin :Suzhou China
Payment Terms :T/T
Supply Ability :10000pcs/month
Delivery Time :3-4 week days
Packaging Details :Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers.
Dimensions :10 x 10.5mm²
Thickness :350 ±25µm
TTV :≤ 10 µm
BoW :- 10 µm ≤ BOW ≤ 10 µm
Macro Defect Density :0cm⁻²
Useable Area :> 90% (edge exclusion)
Product Name :GaN Epitaxial Wafer
National standards of China :GB/T32282-2015
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10*10.5mm2 C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer


Overview

We sell directly from the factory, and therefore can offer the best prices on the market for high quality GaN crystal substrates. Customers from all over the world have trusted our supplies as their preferred supplier of GaN crystal substrates.

Gallium nitride, or GaN, is a material that's starting to be used for semiconductors in chargers. It was used to make LEDs starting in the '90s, and it's also a popular material for solar cell arrays on satellites. The main thing about GaN when it comes to chargers is that it produces less heat.

10 x 10.5 mm2 Free-standing GaN Substrates
Item GaN-FS-C-U-S10 GaN-FS-C-N-S10 GaN-FS-C-SI-S10

10*10.5mm2 C-Face Fe-Doped SI-Type Free-Standing GaN Single Crystal Substrate Macro Defect Density 0cm⁻² TTV ≤ 10 Μm Resistivity 10⁶ Ω·Cm RF Devices Wafer

Remarks:
A circular arc angle (R < 2 mm) is used for distinguishing the Ga and N face.

Dimensions 10 x 10.5 mm2
Thickness 350 ±25 µm
Orientation C plane (0001) off angle toward M-axis 0.35 ±0.15°
Conduction Type N-type N-type Semi-Insulating
Resistivity(300K) < 0.1 Ω·cm < 0.05 Ω·cm > 106 Ω·cm
TTV ≤ 10 µm
BoW - 10 µm ≤ BOW ≤ 10 µm
Ga Face Surface Roughness < 0.2 nm (polished)
or < 0.3 nm (polished and surface treatment for epitaxy)
N Face Surface Roughness 0.5 ~1.5 μm
option: 1~3 nm (fine ground); < 0.2 nm (polished)
Dislocation Density From 1 x 105 to 3 x 106 cm-2 (calculated by CL)*
Macro Defect Density 0 cm-2
Useable Area > 90% (edge exclusion)
Package Packaged in a class 100 clean room environment, in 6 PCS container, under a nitrogen atmosphere

*National standards of China (GB/T32282-2015)

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

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