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Home / Products / GaN Epitaxial Wafer / 10*10.5mm2 GaN Single Crystal Substrate Thickness 350 ±25 µm TTV ≤ 10 µm /

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Shanghai GaNova Electronic Information Co., Ltd.
City:shanghai
Province/State:shanghai
Country/Region:china
Contact Person:Xiwen Bai (Ciel)
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10*10.5mm2 GaN Single Crystal Substrate Thickness 350 ±25 µm TTV ≤ 10 µm
10*10.5mm2 GaN Single Crystal Substrate Thickness 350 ±25 µm TTV ≤ 10 µm
  • 10*10.5mm2 GaN Single Crystal Substrate Thickness 350 ±25 µm TTV ≤ 10 µm
  • 10*10.5mm2 GaN Single Crystal Substrate Thickness 350 ±25 µm TTV ≤ 10 µm
  • 10*10.5mm2 GaN Single Crystal Substrate Thickness 350 ±25 µm TTV ≤ 10 µm
  • 10*10.5mm2 GaN Single Crystal Substrate Thickness 350 ±25 µm TTV ≤ 10 µm
Products Detailed
10*10.5mm2 C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview Gallium Nitride ...
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Product Tags:
bga substrate fr4 pcb 0.4 mm substrate fr4

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